npn silicon epitaxial transistors features ? high dc current gain: h fe = 600 max .(v ce =6.0v, i c =1.0ma) ? high voltage: v ceo =50v maximum ratings symbol rating rating unit v ceo collector- emitter voltage 50 v v cbo collector-base voltage 60 v v ebo emitter- base voltage 5.0 v i c collector current 100 ma p c collector power dissipation 200 mw t j junction temperature -55 to +150 o c t stg storage temperature -55 to +150 o c electrical characteristics @ 25 o c unless otherwise specified symbol parameter min typ max units off characteristics i cbo collector cutoff current (v cb =60vdc,i e =0) --- --- 0.1 uadc i ebo emitter cutoff current (v eb =5.0vdc, i c =0) --- --- 0.1 uadc on characteristics h f dc current gain* (i c =1.0madc, v ce =6.0vdc) 200 --- 600 --- v ce(sat) collector saturation voltage* (i c =100madc, i b =10madc) --- 0.15 0.3 vdc v be(sat) base saturation voltage* (i c =100madc,i b =10madc) --- 0.86 1.0 vdc v be base emitter voltage* (v ce =6.0vdc, i c =1.0madc) 0.55 0.62 0.65 vdc c ob coll ector capacitance (v cb =6.0vdc, i e =0, f=1.0mhz) --- 3.0 --- pf f t gain bandwidth product (v ce =6.0vdc, i e =10madc) --- 250 --- mhz h fe classification marking l6 l7 h fe 200-400 400-600 * pulse test pw<350us, dut y c y cle<2% sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 in c h es mm . 03 1 .800 .035 .900 . 03 7 .950 .037 .950 k revision: 5 2007/06 /04
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